Surface mount N-channel power MOSFET with 30V drain-source breakdown voltage and 4A continuous drain current. Features 50mΩ maximum drain-source on-resistance and 2W maximum power dissipation. Operates across a temperature range of -55°C to 150°C. Includes 2 N-channel FETs in an SO package with 330pF input capacitance. RoHS compliant and lead-free.
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Stmicroelectronics STS4DNF30L technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50mR |
| Fall Time | 22ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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