The STS7C4F30L is a dual N and P-channel MOSFET from STmicroelectronics. It has a maximum drain to source voltage of 30V and a continuous drain current of 4A. The device is packaged in a SOIC package and is designed for surface mount applications. The STS7C4F30L has a maximum power dissipation of 2W and an input capacitance of 1.05nF. It is compliant with RoHS regulations and is available in a cut tape packaging format.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 7A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 1.05nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STS7C4F30L to view detailed technical specifications.
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