STS7PF30L

P-Channel MOSFET -30V, 7A, 21mR, SO-8

P-channel MOSFET featuring -30V drain-source breakdown voltage and a low 0.016 Ohm typical drain-source on-resistance. This power MOSFET offers a continuous drain current of 7A and a maximum power dissipation of 2.5W. Designed for surface mounting, it is housed in a compact SO-8 package with dimensions of 5mm length, 4mm width, and 1.25mm height. Key electrical characteristics include a 2.6nF input capacitance, 23ns fall time, and 65ns turn-off delay. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.

PackageSO

Voltage30V

Current7A

Current Rating-7A

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Technical Specifications

Stmicroelectronics STS7PF30L technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	7A
Current	7A
Current Rating	-7A
Drain to Source Breakdown Voltage	-30V
Drain to Source Resistance	21mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	21mR
Fall Time	23ns
Gate to Source Voltage (Vgs)	20V
Height	1.25mm
Input Capacitance	2.6nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	21mR
RoHS Compliant	Yes
Series	STripFET™
Turn-Off Delay Time	65ns
Turn-On Delay Time	68ns
Voltage	30V
DC Rated Voltage	-30V
Width	4mm