NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 3A Current Rating, with a maximum collector current of 5A. Operates with a transition frequency of 150MHz and a minimum hFE of 20. Packaged in a TO-92 through-hole mount, this RoHS compliant component offers a maximum power dissipation of 1.1W and operates between -65°C and 150°C.
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Stmicroelectronics STSA1805-AP technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 20 |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
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