NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 3A Current Rating, with a maximum collector current of 5A. Operates with a transition frequency of 150MHz and a minimum hFE of 20. Packaged in a TO-92 through-hole mount, this RoHS compliant component offers a maximum power dissipation of 1.1W and operates between -65°C and 150°C.
Frequency150MHz
PackageTO-92
Current Rating3A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STSA1805-AP technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
600mV
Current Rating
3A
Emitter Base Voltage (VEBO)
7V
Frequency
150MHz
Gain Bandwidth Product
150MHz
hFE Min
20
Max Breakdown Voltage
60V
Max Collector Current
5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.1W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.1W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
60V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STSA1805-AP Datasheet
Download the complete datasheet for Stmicroelectronics STSA1805-AP to view detailed technical specifications.
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