N-channel Power MOSFET, SOT-23-6 package, featuring 20V drain-source breakdown voltage and 5A continuous drain current. Offers low on-resistance with a typical value of 0.025 Ohm and a maximum of 40mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.6W. Surface mountable with lead-free and RoHS compliant construction.
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Stmicroelectronics STT5N2VH5 technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 40mR |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.3mm |
| Input Capacitance | 367pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Width | 1.75mm |
| RoHS | Compliant |
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