N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in IPAK package
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Stmicroelectronics STU10NM60N technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 6.9mm |
| Input Capacitance | 540pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 10ns |
| Width | 2.4mm |
| RoHS | Compliant |
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