N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers 0.35 Ohm typical drain-source resistance, with a maximum of 380mR. This through-hole component, housed in an IPAK package, boasts a 110W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 9.5ns fall time and 11ns turn-on delay time.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power110W
Quick Jump:
Technical Specifications
Stmicroelectronics STU13N60M2 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
25V
Height
6.2mm
Input Capacitance
580pF
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
380mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
41ns
Turn-On Delay Time
11ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU13N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STU13N60M2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
