N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers 0.35 Ohm typical drain-source resistance, with a maximum of 380mR. This through-hole component, housed in an IPAK package, boasts a 110W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 9.5ns fall time and 11ns turn-on delay time.
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Stmicroelectronics STU13N60M2 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 6.2mm |
| Input Capacitance | 580pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 11ns |
| Width | 2.4mm |
| RoHS | Compliant |
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