N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an IPAK package
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| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 6.9mm |
| Input Capacitance | 790pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 3ns |
| Width | 2.4mm |
| RoHS | Compliant |
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