N-CHANNEL POWER MOSFET, TO-251 package, offering 30V drain-source breakdown voltage and 80A continuous drain current. Features low 3.3mΩ Rds On resistance, 110W maximum power dissipation, and operates across a -55°C to 175°C temperature range. Includes fast switching characteristics with 17ns turn-on delay and 46ns fall time.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STU150N3LLH6 technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.9mm |
| Input Capacitance | 4.04nF |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | DeepGATE™, STripFET™ VI |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 17ns |
| Width | 2.4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STU150N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STU150N3LLH6 to view detailed technical specifications.
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