N-CHANNEL POWER MOSFET, TO-251 package, offering 30V drain-source breakdown voltage and 80A continuous drain current. Features low 3.3mΩ Rds On resistance, 110W maximum power dissipation, and operates across a -55°C to 175°C temperature range. Includes fast switching characteristics with 17ns turn-on delay and 46ns fall time.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STU150N3LLH6 technical specifications.
General
Package/Case
TO-251
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
30V
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Height
6.9mm
Input Capacitance
4.04nF
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
3.3mR
Reach SVHC Compliant
No
RoHS Compliant
No
Series
DeepGATE™, STripFET™ VI
Threshold Voltage
1V
Turn-Off Delay Time
75ns
Turn-On Delay Time
17ns
Width
2.4mm
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics STU150N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STU150N3LLH6 to view detailed technical specifications.
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