N-channel Power MOSFET featuring 450V drain-source breakdown voltage and 1.8A continuous drain current. This SuperMESH3™ device offers a low 3.8 Ohm drain-source on-resistance and a 3.75V threshold voltage. Packaged in a TO-251-3 (IPAK) through-hole mount, it supports a maximum power dissipation of 27W and operates within a -55°C to 150°C temperature range. RoHS compliant and lead-free.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power27W
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Technical Specifications
Stmicroelectronics STU3N45K3 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
1.8A
Drain to Source Breakdown Voltage
450V
Drain to Source Resistance
3.8R
Drain to Source Voltage (Vdss)
450V
Gate to Source Voltage (Vgs)
30V
Height
6.9mm
Input Capacitance
150pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
27W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
27W
Radiation Hardening
No
Rds On Max
3.8R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU3N45K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU3N45K3 to view detailed technical specifications.
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