N-channel Power MOSFET featuring 450V drain-source breakdown voltage and 1.8A continuous drain current. This SuperMESH3™ device offers a low 3.8 Ohm drain-source on-resistance and a 3.75V threshold voltage. Packaged in a TO-251-3 (IPAK) through-hole mount, it supports a maximum power dissipation of 27W and operates within a -55°C to 150°C temperature range. RoHS compliant and lead-free.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power27W
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Technical Specifications
Stmicroelectronics STU3N45K3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 3.8R |
| Drain to Source Voltage (Vdss) | 450V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.9mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 27W |
| Radiation Hardening | No |
| Rds On Max | 3.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Width | 2.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU3N45K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU3N45K3 to view detailed technical specifications.
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