N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 2.7A continuous drain current. This SuperMESH3™ device offers a typical 2.2 Ohm on-resistance and is housed in a TO-251 IPAK package for through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage, 385pF input capacitance, and fast switching times with a 9ns turn-on delay. Operating across a wide temperature range from -55°C to 150°C, it supports up to 45W of power dissipation and is RoHS compliant.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STU3N62K3 technical specifications.
General
Package/Case
TO-251
Continuous Drain Current (ID)
2.7A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
620V
Fall Time
15.6ns
Gate to Source Voltage (Vgs)
30V
Height
6.9mm
Input Capacitance
385pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
2.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
22ns
Turn-On Delay Time
9ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU3N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU3N62K3 to view detailed technical specifications.
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