N-channel SuperMESH3™ Power MOSFET featuring 620V drain-source breakdown voltage and 3.8A continuous drain current. This device offers a low 1.7 Ohm typical drain-source on-resistance and is housed in a TO-251 IPAK package for through-hole mounting. Key electrical characteristics include a 30V gate-source voltage rating, 550pF input capacitance, and fast switching times with a 10ns turn-on delay and 19ns fall time. Operating across a wide temperature range of -55°C to 150°C, it supports up to 70W of power dissipation and is RoHS compliant.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STU4N62K3 technical specifications.
General
Package/Case
TO-251
Continuous Drain Current (ID)
3.8A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
620V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
6.9mm
Input Capacitance
550pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
29ns
Turn-On Delay Time
10ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU4N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU4N62K3 to view detailed technical specifications.
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