N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 3A continuous drain current. This device offers 2.5 Ohm typical drain-source on-resistance and is housed in a TO-251-3 IPAK package for through-hole mounting. Key switching characteristics include a 16.5ns turn-on delay and 21ns fall time, with a maximum power dissipation of 60W. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant and lead-free.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STU4N80K5 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
800V
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
Input Capacitance
175pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
2.5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
36ns
Turn-On Delay Time
16.5ns
Weight
0.139332oz
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU4N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STU4N80K5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.