N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 3A continuous drain current. This device offers 2.5 Ohm typical drain-source on-resistance and is housed in a TO-251-3 IPAK package for through-hole mounting. Key switching characteristics include a 16.5ns turn-on delay and 21ns fall time, with a maximum power dissipation of 60W. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant and lead-free.
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Stmicroelectronics STU4N80K5 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.2mm |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 16.5ns |
| Weight | 0.139332oz |
| Width | 2.4mm |
| RoHS | Compliant |
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