The STU6N65K3 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 650V and a continuous drain current of 5.4A. The device has a maximum power dissipation of 110W and is packaged in a TO-251-3 case with a through-hole mount. The STU6N65K3 is RoHS compliant and part of the SuperMESH3 series.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power110W
Quick Jump:
Technical Specifications
Stmicroelectronics STU6N65K3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 880pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 1.3R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU6N65K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU6N65K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
