N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 75A continuous drain current. This single element transistor is housed in an IPAK package with 3 through-hole pins and a tab, offering a maximum drain-source on-resistance of 5.9 mOhm at 10V. It supports a maximum power dissipation of 60000 mW and operates across a wide temperature range from -55°C to 175°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STU75N3LLH6-S technical specifications.
General
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.6(Max) |
| Package Width (mm) | 2.4(Max) |
| Package Height (mm) | 6.2(Max) |
| Seated Plane Height (mm) | 8.4(Max) |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 75A |
| Maximum Drain Source Resistance | 5.9@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1690@25VpF |
| Maximum Power Dissipation | 60000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STU75N3LLH6-S Datasheet
Download the complete datasheet for Stmicroelectronics STU75N3LLH6-S to view detailed technical specifications.
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