N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 5A continuous drain current. This component offers a low 860mΩ typical drain-source resistance and is housed in a TO-251-3 IPAK package for through-hole mounting. Key switching characteristics include a 7.6ns turn-on delay and 15.9ns fall time. Maximum power dissipation is rated at 60W, with an operating temperature range from -55°C to 150°C.
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Stmicroelectronics STU7N60M2 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 860mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15.9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 6.2mm |
| Input Capacitance | 271pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 19.3ns |
| Turn-On Delay Time | 7.6ns |
| Width | 2.4mm |
| RoHS | Compliant |
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