N-channel MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers a low 5.4mΩ drain-source resistance and 70W maximum power dissipation. Designed for through-hole mounting in TO-251-3 packages, with fast switching characteristics including a 6ns turn-on delay and 10.8ns fall time. Operates across a wide temperature range from -55°C to 175°C.
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Stmicroelectronics STU85N3LH5 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10.8ns |
| Gate to Source Voltage (Vgs) | 22V |
| Height | 6.9mm |
| Input Capacitance | 1.85nF |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 5.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 23.6ns |
| Turn-On Delay Time | 6ns |
| Width | 2.4mm |
| RoHS | Compliant |
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