N-channel power MOSFET featuring 500V drain-source voltage and 5A continuous drain current. Offers a low 0.79 ohm Rds(on) at a 10V gate-source voltage. This TO-251 packaged device boasts a maximum power dissipation of 45W and operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include an 8.8ns fall time, 7ns turn-on delay, and 25ns turn-off delay. ROHS compliant and designed for through-hole mounting.
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Stmicroelectronics STU8NM50N technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 8.8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 6.9mm |
| Input Capacitance | 364pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 790mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 7ns |
| Width | 2.4mm |
| RoHS | Compliant |
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