7A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
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Stmicroelectronics STU8NM60ND technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 560pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 700mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 37ns |
| RoHS | Compliant |
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