N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 5.5A continuous drain current. This component offers a low 0.72 Ohm typical drain-source resistance and operates within a temperature range of -55°C to 150°C. Designed for through-hole mounting in a TO-251-3 IPAK package, it boasts fast switching characteristics with turn-on delay of 8.8ns and fall time of 13.5ns. Maximum power dissipation is rated at 60W.
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Stmicroelectronics STU9N60M2 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 780mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 13.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 6.2mm |
| Input Capacitance | 320pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 780mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 8.8ns |
| Width | 2.4mm |
| RoHS | Compliant |
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