N-channel Power MOSFET featuring 40V drain-source breakdown voltage and a low 1.25 mOhm typical drain-source on-resistance. This surface-mount device offers a continuous drain current of 270A and a maximum power dissipation of 300W, suitable for demanding applications. It operates within a temperature range of -55°C to 175°C and is packaged in Tape and Reel for efficient assembly. Key switching characteristics include a 25ns turn-on delay and a 45ns fall time.
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| Continuous Drain Current (ID) | 270A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.25R |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 1.5MR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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