N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 8.3A continuous drain current. Offers a low 1.38 Ohm typical drain-source on-resistance and 230W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, with a maximum operating temperature of 150°C. Includes fast switching characteristics with turn-on delay of 27ns and fall time of 55ns.
PackageTO-247
Current Rating8.3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW11NK100Z technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 8.3A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.38R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 1.38R |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 1.38R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 98ns |
| Turn-On Delay Time | 27ns |
| DC Rated Voltage | 1kV |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW11NK100Z Datasheet
Download the complete datasheet for Stmicroelectronics STW11NK100Z to view detailed technical specifications.
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