N-channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 11A continuous drain current. This component offers a typical on-resistance of 0.35 Ohm, with a maximum specified at 400mR. Packaged in a TO-247 through-hole mount, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 150W. Key switching parameters include a 15ns fall time, 22ns turn-on delay, and 46ns turn-off delay.
PackageTO-247
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW11NM80 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
400mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
1.63nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
400mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
46ns
Turn-On Delay Time
22ns
DC Rated Voltage
800V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW11NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STW11NM80 to view detailed technical specifications.
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