N-channel Power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element transistor operates in enhancement mode with a maximum drain-source on-resistance of 640 mOhm at 10V. Housed in a TO-247 package with through-hole mounting, it offers a typical gate charge of 59 nC and input capacitance of 1740 pF. Maximum power dissipation is 150W, with an operating temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STW12NK60Z technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
10A
Maximum Drain Source Resistance
640@10VmOhm
Typical Gate Charge @ Vgs
59@10VnC
Typical Gate Charge @ 10V
59nC
Typical Input Capacitance @ Vds
1740@25VpF
Maximum Power Dissipation
150000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STW12NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STW12NK60Z to view detailed technical specifications.
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