N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 13A continuous drain current. This component offers a typical drain-source on-resistance of 0.56 Ohm and a maximum of 700mR. Operating within a -55°C to 150°C temperature range, it supports up to 350W power dissipation. The MOSFET is housed in a TO-247 package with through-hole mounting and is RoHS compliant.
PackageTO-247
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW13NK100Z technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 700mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Rds On Max | 700mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 145ns |
| Turn-On Delay Time | 45ns |
| DC Rated Voltage | 1kV |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW13NK100Z Datasheet
Download the complete datasheet for Stmicroelectronics STW13NK100Z to view detailed technical specifications.
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