N-channel power MOSFET featuring 500V drain-source breakdown voltage and 12A continuous drain current. This through-hole component offers a low 320mΩ maximum drain-source on-resistance. With a 100W power dissipation and TO-247 package, it operates from -55°C to 150°C. Key switching characteristics include a 10ns fall time and 40ns turn-off delay.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STW13NM50N datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 320mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 40ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW13NM50N to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
