N-channel power MOSFET featuring 500V drain-source breakdown voltage and 12A continuous drain current. This through-hole component offers a low 320mΩ maximum drain-source on-resistance. With a 100W power dissipation and TO-247 package, it operates from -55°C to 150°C. Key switching characteristics include a 10ns fall time and 40ns turn-off delay.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STW13NM50N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 320mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW13NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STW13NM50N to view detailed technical specifications.
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