N-channel power MOSFET featuring 950V drain-to-source breakdown voltage and 12A continuous drain current. Offers a low 0.41 Ohm typical drain-to-source resistance and a maximum of 500mR. Designed for through-hole mounting in a TO-247 package, this component operates within a temperature range of -55°C to 150°C and supports a gate-to-source voltage of 30V. Maximum power dissipation is rated at 250W.
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| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 410mR |
| Drain to Source Voltage (Vdss) | 950V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 20ns |
| Weight | 1.340411oz |
| Width | 5.15mm |
| RoHS | Compliant |
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