N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 15A continuous drain current. Offers a low 0.40 Ohm typical drain-source on-resistance and 350W maximum power dissipation. Housed in a TO-247 through-hole package, this RoHS compliant component operates from -55°C to 150°C. Key switching parameters include a 35ns fall time and 42ns turn-on delay.
PackageTO-247
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW15NK90Z technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
15A
Current Rating
13A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
900V
Drain-source On Resistance-Max
400mR
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
6.1nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
350W
Radiation Hardening
No
Rds On Max
550mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
135ns
Turn-On Delay Time
42ns
DC Rated Voltage
1kV
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW15NK90Z Datasheet
Download the complete datasheet for Stmicroelectronics STW15NK90Z to view detailed technical specifications.
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