The STW16NM50N is a 500V 15A N-CHANNEL MOSFET packaged in a TO-247-3 through-hole package. It has a maximum operating temperature range of -55°C to 150°C and is RoHS compliant. The device features a maximum power dissipation of 125W and a drain to source resistance of 260mR. It also has a fall time of 16ns and a turn-off delay time of 60ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STW16NM50N technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 260mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW16NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STW16NM50N to view detailed technical specifications.
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