Stmicroelectronics
STW16NM50N
15A, 500V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STW16NM50N technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
260mR
Drain to Source Voltage (Vdss)
500V
Fall Time
16ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
260mR
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
60ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW16NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STW16NM50N to view detailed technical specifications.
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