N-channel Power MOSFET featuring 600V drain-source voltage and 13A continuous drain current. Offers a typical on-resistance of 0.26 Ohm and a maximum of 285mR. Designed for through-hole mounting in a TO-247 package, this device boasts fast switching speeds with a 12ns turn-on delay and 25ns fall time. Maximum power dissipation is rated at 110W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
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Stmicroelectronics STW18NM60N technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 285mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 285mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 12ns |
| Width | 5.15mm |
| RoHS | Compliant |
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