N-channel power MOSFET featuring 500V drain-source breakdown voltage and 14A continuous drain current. Offers a low 250mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 110W. Key switching characteristics include a 12ns turn-on delay and 17ns fall time. RoHS compliant.
Sign in to ask questions about the Stmicroelectronics STW19NM50N datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STW19NM50N technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 12ns |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW19NM50N to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
