Automotive-grade N-channel Power MOSFET, 600V drain-to-source breakdown voltage, 13A continuous drain current, and 260mΩ drain-to-source resistance. Features a TO-247-3 package for through-hole mounting, with a maximum power dissipation of 110W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a 12ns turn-on delay and 55ns turn-off delay. RoHS compliant and part of the MDmesh™ II series.
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Stmicroelectronics STW19NM60N technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1nF |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 285mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, MDmesh™ II |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 12ns |
| Width | 5.15mm |
| RoHS | Compliant |
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