N-channel power MOSFET featuring 650V drain-source breakdown voltage and 18A continuous drain current. Offers low on-resistance with a typical value of 0.160 Ohm and a maximum of 168mR. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 130W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a fall time of 7.5ns and turn-on/off delay times of 43ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power130W
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Technical Specifications
Stmicroelectronics STW20N65M5 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
168MR
Fall Time
7.5ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
1.345nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
130W
Rds On Max
190mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
43ns
Turn-On Delay Time
43ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW20N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW20N65M5 to view detailed technical specifications.
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