N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 270mΩ maximum drain-source on-resistance. This SuperMESH™ device offers a continuous drain current of 17A and a maximum power dissipation of 190W. Packaged in a TO-247 through-hole mount, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 28ns turn-on delay and a 15ns fall time.
PackageTO-247
Current Rating17A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW20NK50Z technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
270mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
2.6nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
70ns
Turn-On Delay Time
28ns
DC Rated Voltage
500V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW20NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STW20NK50Z to view detailed technical specifications.
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