
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. Offers a low 290mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a 192W maximum power dissipation and operates within a -65°C to 150°C temperature range. Key switching characteristics include an 11ns fall time, 25ns turn-on delay, and 42ns turn-off delay.
Stmicroelectronics STW20NM60 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 290mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 192W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 650V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW20NM60 to view detailed technical specifications.
No datasheet is available for this part.
