N-channel power MOSFET featuring 500V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 190mΩ Rds(on) and 140W power dissipation, suitable for demanding applications. It is housed in a TO-247 package and boasts fast switching characteristics with turn-on delay of 22ns and fall time of 30ns. RoHS compliant and designed for operation between -55°C and 150°C.
PackageTO-247
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW21NM50N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.95nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW21NM50N Datasheet
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