N-channel power MOSFET featuring 500V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 190mΩ Rds(on) and 140W power dissipation, suitable for demanding applications. It is housed in a TO-247 package and boasts fast switching characteristics with turn-on delay of 22ns and fall time of 30ns. RoHS compliant and designed for operation between -55°C and 150°C.
PackageTO-247
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW21NM50N technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.95nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
190mR
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
90ns
Turn-On Delay Time
22ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW21NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STW21NM50N to view detailed technical specifications.
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