N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. This component offers a low 0.17 Ohm typical drain-source on-resistance and is housed in a TO-247 package for through-hole mounting. Key specifications include a 4V threshold voltage, 1.8nF input capacitance, and fast switching times with a 48ns fall time. Maximum power dissipation is rated at 140W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant device includes a fast diode.
Sign in to ask questions about the Stmicroelectronics STW21NM60ND datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STW21NM60ND technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 220mR |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 18ns |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW21NM60ND to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
