STW21NM60ND

600V 17A N-CH MOSFET TO-247, 220mR RdsOn

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. This component offers a low 0.17 Ohm typical drain-source on-resistance and is housed in a TO-247 package for through-hole mounting. Key specifications include a 4V threshold voltage, 1.8nF input capacitance, and fast switching times with a 48ns fall time. Maximum power dissipation is rated at 140W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant device includes a fast diode.

PackageTO-247

MountingThrough Hole

PolarityN-CHANNEL

Power140W

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Technical Specifications

Stmicroelectronics STW21NM60ND technical specifications.

General

Package/Case	TO-247
Continuous Drain Current (ID)	17A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	220mR
Drain to Source Voltage (Vdss)	600V
Drain-source On Resistance-Max	220mR
Fall Time	48ns
Gate to Source Voltage (Vgs)	25V
Height	20.15mm
Input Capacitance	1.8nF
Lead Free	Lead Free
Length	15.75mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	140W
Mount	Through Hole
Number of Elements	1
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	140W
Radiation Hardening	No
Rds On Max	220mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	FDmesh™
Threshold Voltage	4V
Turn-Off Delay Time	70ns
Turn-On Delay Time	18ns
Width	5.15mm