N-channel power MOSFET featuring 600V drain-source voltage and 16A continuous drain current. Offers a low 220mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this RoHS compliant component boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 1.33nF input capacitance, 11ns turn-on delay, and 38ns fall time.
PackageTO-247
MountingThrough Hole
Power125W
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Technical Specifications
Stmicroelectronics STW22NM60N technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
16A
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
220mR
Fall Time
38ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
1.33nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
220mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
74ns
Turn-On Delay Time
11ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW22NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW22NM60N to view detailed technical specifications.
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