N-channel power MOSFET featuring 600V drain-source voltage and 16A continuous drain current. Offers a low 220mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this RoHS compliant component boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 1.33nF input capacitance, 11ns turn-on delay, and 38ns fall time.
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Stmicroelectronics STW22NM60N technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 220mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 1.33nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 11ns |
| Width | 5.15mm |
| RoHS | Compliant |
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