N-channel power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a 150W power dissipation and operates within a -55°C to 150°C temperature range. Includes fast switching characteristics with turn-on and turn-off delay times of 14ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STW24N60M2 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
190MR
Fall Time
61ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
1.06nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
190mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
14ns
Turn-On Delay Time
14ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW24N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STW24N60M2 to view detailed technical specifications.
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