N-channel power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a 150W power dissipation and operates within a -55°C to 150°C temperature range. Includes fast switching characteristics with turn-on and turn-off delay times of 14ns.
Sign in to ask questions about the Stmicroelectronics STW24N60M2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STW24N60M2 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Fall Time | 61ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1.06nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 14ns |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW24N60M2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
