
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a 150W power dissipation and operates within a -55°C to 150°C temperature range. Includes fast switching characteristics with turn-on and turn-off delay times of 14ns.
Stmicroelectronics STW24N60M2 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Fall Time | 61ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1.06nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 14ns |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW24N60M2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.