N-channel power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 11.5ns turn-on delay and 37ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STW24NM60N technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
190MR
Fall Time
37ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
73ns
Turn-On Delay Time
11.5ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW24NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW24NM60N to view detailed technical specifications.
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