N-channel Power MOSFET featuring 800V drain-source voltage and 19.5A continuous drain current. This single-element SuperMESH process technology transistor is housed in a 3-pin TO-247 package with through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, a typical gate threshold voltage of 5V, and a low drain-source on-resistance of 260 mOhm at 10V. Maximum power dissipation is 250W, with an operating temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STW25N80K5 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SuperMESH
Maximum Drain Source Voltage
800V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
19.5A
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
260@10VmOhm
Typical Gate Charge @ Vgs
40@10VnC
Typical Gate Charge @ 10V
40nC
Typical Input Capacitance @ Vds
1600@100VpF
Maximum Power Dissipation
250000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STW25N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STW25N80K5 to view detailed technical specifications.
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