N-channel power MOSFET featuring 600V drain-source breakdown voltage and a 30A continuous drain current. Offers a low 135mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 313W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 20ns fall time and 14ns turn-off delay time.
PackageTO-247-3
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STW26NM60 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 135mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 313W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 313W |
| Rds On Max | 135mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 14ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW26NM60 Datasheet
Download the complete datasheet for Stmicroelectronics STW26NM60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
