N-channel power MOSFET featuring 600V drain-source breakdown voltage and a 30A continuous drain current. Offers a low 135mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 313W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 20ns fall time and 14ns turn-off delay time.
Stmicroelectronics STW26NM60 technical specifications.
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