N-channel power MOSFET featuring 600V drain-source breakdown voltage and a 30A continuous drain current. Offers a low 135mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 313W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 20ns fall time and 14ns turn-off delay time.
PackageTO-247-3
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW26NM60 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
135mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
135mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.9nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
313W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
313W
Rds On Max
135mR
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
14ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW26NM60 Datasheet
Download the complete datasheet for Stmicroelectronics STW26NM60 to view detailed technical specifications.
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