N-channel enhancement mode power MOSFET, 600V drain-source voltage, 20A continuous drain current, and 165mΩ maximum drain-source resistance at 10V. Features a typical gate charge of 60nC at 10V and input capacitance of 1800pF at 50V. Packaged in a 3-pin TO-247 plastic through-hole configuration with a tab, offering a maximum power dissipation of 140W and operating temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STW26NM60N-H technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
20A
Maximum Drain Source Resistance
165@10VmOhm
Typical Gate Charge @ Vgs
60@10VnC
Typical Gate Charge @ 10V
60nC
Typical Input Capacitance @ Vds
1800@50VpF
Maximum Power Dissipation
140000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Stmicroelectronics STW26NM60N-H Datasheet
Download the complete datasheet for Stmicroelectronics STW26NM60N-H to view detailed technical specifications.
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