N-channel enhancement mode power MOSFET, 600V drain-source voltage, 20A continuous drain current, and 165mΩ maximum drain-source resistance at 10V. Features a typical gate charge of 60nC at 10V and input capacitance of 1800pF at 50V. Packaged in a 3-pin TO-247 plastic through-hole configuration with a tab, offering a maximum power dissipation of 140W and operating temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STW26NM60N-H technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.75(Max) |
| Package Width (mm) | 5.15(Max) |
| Package Height (mm) | 20.15(Max) |
| Seated Plane Height (mm) | 24.45(Max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | MDmesh |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±25V |
| Maximum Continuous Drain Current | 20A |
| Maximum Drain Source Resistance | 165@10VmOhm |
| Typical Gate Charge @ Vgs | 60@10VnC |
| Typical Gate Charge @ 10V | 60nC |
| Typical Input Capacitance @ Vds | 1800@50VpF |
| Maximum Power Dissipation | 140000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Stmicroelectronics STW26NM60N-H Datasheet
Download the complete datasheet for Stmicroelectronics STW26NM60N-H to view detailed technical specifications.
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