
N-channel enhancement mode power MOSFET, 600V drain-source voltage, 20A continuous drain current, and 165mΩ maximum drain-source resistance at 10V. Features a typical gate charge of 60nC at 10V and input capacitance of 1800pF at 50V. Packaged in a 3-pin TO-247 plastic through-hole configuration with a tab, offering a maximum power dissipation of 140W and operating temperature range of -55°C to 150°C.
Stmicroelectronics STW26NM60N-H technical specifications.
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