N-channel power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a low 0.145 Ohm typical drain-source resistance and a maximum of 175mR. Designed with a fast diode, it operates within a -55°C to 150°C temperature range and dissipates up to 190W. Packaged in a TO-247-3, this RoHS compliant MOSFET boasts fast switching characteristics with turn-on delay times of 22ns and fall times of 27.5ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW26NM60ND technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 27.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1.817nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 175mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 69ns |
| Turn-On Delay Time | 22ns |
| Weight | 1.340411oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW26NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STW26NM60ND to view detailed technical specifications.
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