N-channel high-voltage power MOSFET in a TO-247 package uses MDmesh DM2 fast-recovery diode technology for switching applications. The device is rated for 600 V drain-source breakdown voltage, 21 A continuous drain current, and 170 W total dissipation at 25 °C case temperature. Typical on-resistance is 0.13 Ω at 10 V gate drive, with a 0.16 Ω maximum rating. It includes a fast-recovery body diode, 100% avalanche testing, high dv/dt ruggedness, and built-in gate-source Zener protection.
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| Transistor Type | N-channel Power MOSFET |
| Drain-Source Breakdown Voltage | 600 minV |
| Drain-Source Voltage at Maximum Junction Temperature | 650V |
| Continuous Drain Current at 25°C Case | 21A |
| Continuous Drain Current at 100°C Case | 14A |
| Pulsed Drain Current | 84A |
| Total Power Dissipation at 25°C Case | 170W |
| Static Drain-Source On-Resistance | 0.13 typ, 0.16 maxΩ |
| Gate-Source Voltage | ±25V |
| Gate Threshold Voltage | 3 min, 4 typ, 5 maxV |
| Input Capacitance | 1500 typpF |
| Output Capacitance | 70 typpF |
| Reverse Transfer Capacitance | 1.6 typpF |
| Total Gate Charge | 34 typnC |
| Turn-On Delay Time | 16 typns |
| Turn-Off Delay Time | 53 typns |
| Source-Drain Current | 21A |
| Reverse Recovery Time | 140 typ at 25°C, 309 typ at 150°Cns |
| Single Pulse Avalanche Energy | 350mJ |
| Operating Junction Temperature Range | -55 to 150°C |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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