N-channel Power MOSFET featuring 600V drain-source voltage and 23A continuous drain current. This component offers a low 0.120 Ohm typical drain-source resistance and a fast switching capability with a 27ns fall time. Encased in a TO-247 package for through-hole mounting, it operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 190W. The device is RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power19W
Quick Jump:
Technical Specifications
Stmicroelectronics STW28NM60ND technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 2.09nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 19W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 23.5ns |
| Weight | 1.340411oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW28NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STW28NM60ND to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
