N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 27A continuous drain current. Offers a maximum drain-source on-resistance of 115mΩ at 10Vgs. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 3V threshold voltage and a 60ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STW30NM50N technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
27A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
115mR
Fall Time
60ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
2.74nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Rds On Max
115mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
115ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW30NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STW30NM50N to view detailed technical specifications.
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