N-channel power MOSFET featuring 650V drain-source breakdown voltage and 22A continuous drain current. This through-hole component offers a maximum on-resistance of 148mΩ and 150W power dissipation, housed in a TO-247 package. Operating across a wide temperature range from -55°C to 150°C, it includes a 25V gate-source voltage rating and 816pF input capacitance. The device is RoHS compliant and lead-free.
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Stmicroelectronics STW31N65M5 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 148mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 148mR |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 816pF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 148mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 46ns |
| Width | 5.15mm |
| RoHS | Compliant |
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