N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 26A continuous drain current. This through-hole component offers a low 0.108 Ohm typical drain-source resistance and 190W maximum power dissipation. Designed with a TO-247 package, it boasts fast switching characteristics with a 9ns fall time and 16ns turn-on delay. Operating across a -55°C to 150°C temperature range, this RoHS compliant device is ideal for demanding power applications.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STW33N60M2 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
26A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
108mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
1.781nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Rds On Max
125mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
109ns
Turn-On Delay Time
16ns
Weight
1.340411oz
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW33N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STW33N60M2 to view detailed technical specifications.
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