N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 26A continuous drain current. This through-hole component offers a low 0.108 Ohm typical drain-source resistance and 190W maximum power dissipation. Designed with a TO-247 package, it boasts fast switching characteristics with a 9ns fall time and 16ns turn-on delay. Operating across a -55°C to 150°C temperature range, this RoHS compliant device is ideal for demanding power applications.
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Stmicroelectronics STW33N60M2 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 108mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 1.781nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 109ns |
| Turn-On Delay Time | 16ns |
| Weight | 1.340411oz |
| Width | 5.15mm |
| RoHS | Compliant |
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