N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 28A continuous drain current. This through-hole component offers a low 110mΩ typical drain-source on-resistance and is housed in a TO-247 package. Maximum power dissipation is rated at 190W, with operating temperatures ranging from -55°C to 150°C. The MOSFET is RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STW34N65M5 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
110mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
110mR
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
2.7nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
110mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
59ns
Turn-On Delay Time
59ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW34N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW34N65M5 to view detailed technical specifications.
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